Smart optical measurement probe for autonomously detecting nano-defects on bare semiconductor wafer surface: highly sensitive observation system using phase-contrast microscopy with a spatial light modulator

Nowadays, the yield rate of semiconductor process is strongly affected even by nanoscale defects on bare Si wafer surfaces. Therefore, a non-destructive and high-speed method for detection nanoparticle contamination highly demanded. In this research, proposed based fact that volatilization volatile inert liquid behaves as an autonomous search probe. Dynamic phase contrast microscopy (Dynamic PCM) to detect small thickness changes thin film with high sensitivity. The dynamic PCM expected have double sensitivity compared normal it experimentally verified. Based previous results, 4% intensity change 10 nm particles over 1.5% 5 using PCM.